Array substrate, display panel and display device

ABSTRACT

An array substrate, a display panel and a display device are provided. The array substrate includes, a base substrate, a thin film transistor layer, a first passivation layer, a quantum dot layer, a color filter layer, a planarization layer and a metal wire grid polarizing layer that are sequentially disposed on the base substrate. The quantum dot layer is located in a display region of the array substrate, and an orthographic projection of the color filter layer on the base substrate.

The present application claims priority of Chinese patent applicationNo. 201910444498.3, filed on May 27, 2019, the disclosure of which isincorporated herein by reference as part of the application.

TECHNICAL FIELD

Embodiments of the present disclosure relate to an array substrate, adisplay panel and a display device.

BACKGROUND

With the development of liquid crystal display products, thetransmittance and color gamut of liquid crystal display panels haveencountered bottlenecks, and the method of wavelength conversion has tobe selected to improve the transmittance and the color gamut of theliquid crystal display panels to meet display requirements.

Quantum dot material is an excellent wavelength conversion material. Thequantum dot material is made into quantum dot patterns with pixel-levelsizes, which can specifically convert light from a backlight into lightwith a color required by the pixel, which can not only meet therequirements of the transmittance and the color gamut, but also increasethe utilization of the backlight.

Because the fluorescent properties of the quantum dot material maycompletely destroy a polarization state of light, the quantum dotmaterial must be used with built-in polarizers. At present, the bestbuilt-in polarizers are metal nano-gratings. Because the metalnano-gratings are made of metal materials, if the nano-gratings are madeon an upper substrate, an electric field will be formed between themetal nano-gratings and pixel electrodes on a lower substrate. Forliquid crystal display products in an In-Plane-Switching (IPS) displaymode or an Advanced-Super-Dimension-Switch (ADS) display mode, theelectric field will cause a significant reduction in the liquid crystaldisplay efficiency. Therefore, the metal nano-gratings are usuallydisposed on the lower substrate. If the metal nano-gratings are disposedon the lower substrate, in order to realize normal display, the quantumdot patterns must also be disposed on the lower substrate.

SUMMARY

According to at least one embodiment of the present disclosure, an arraysubstrate is provided, and the array substrate comprises: a basesubstrate; a thin film transistor layer on the base substrate; a firstpassivation layer on a side of the thin film transistor layer away fromthe base substrate; a quantum dot layer on a side of the firstpassivation layer away from the base substrate and in a display regionof the array substrate; a color filter layer on a side of the quantumdot layer away from the base substrate, in which an orthographicprojection of the quantum dot layer on the base substrate is within anorthographic projection of the color filter layer on the base substrate;a planarization layer on a side of the first passivation layer away fromthe base substrate and on a side of the color filter layer away from thebase substrate; and a metal grid polarizing layer on a side of theplanarization layer away from the base substrate.

For example, the thin film transistor layer comprises a drivingtransistor part and a light sensing compensation transistor part, eachof the driving transistor part and the light sensing compensationtransistor part comprises a gate electrode, a gate insulating layer, anactive layer, a source electrode and a drain electrode; the arraysubstrate further comprises a photoelectric conversion device, thephotoelectric conversion device is configured to receive a part ofexcitation light generated by the quantum dot layer and is reflected bythe metal grid polarizing layer and convert the part of the excitationlight into an electrical signal; and the photoelectric conversion devicecomprises an upper electrode, a lower electrode, and a photoelectricconversion layer between the upper electrode and the lower electrode,and the lower electrode is electrically connected to the sourceelectrode or the drain electrode of the light sensing compensationtransistor part.

For example, the array substrate further comprises a plurality of gatelines and a plurality of data lines, in which the plurality of the gatelines and the plurality of the data lines intersect each other to definea plurality of display sub-pixels, each of the display sub-pixelscomprises the driving transistor part, the gate electrode of the drivingtransistor part is electrically connected to a corresponding gate line,and the source electrode or the drain electrode of the drivingtransistor is electrically connected to a corresponding data line; andin each of the display sub-pixels, a pixel electrode is provided on aside of the metal grid polarizing layer away from the base substrate,and the pixel electrode is electrically connected to the drain electrodeor the source electrode of the driving transistor part through a secondvia hole and a second lead line filled in the second via hole.

For example, the light sensing compensation transistor part and thephotoelectric conversion device are in at least one display sub-pixel ofthe plurality of the display sub-pixels; the array substrate furthercomprises a sensing control line provided in parallel with the pluralityof the gate lines and a signal reading line provided in parallel withthe plurality of the data lines; and the gate electrode of the lightsensing compensation transistor part is electrically connected to thesensing control line, and the drain electrode or the source electrode ofthe light sensing compensation transistor part is electrically connectedto the signal reading line.

For example, the array substrate further comprises a common electrodeline provided in parallel with the plurality of the gate lines, and ineach of the display sub-pixels, the metal grid polarizing layer iselectrically connected to the common electrode line through a first viahole and a first lead line filled in the first via hole, so that themetal grid polarizing layer is further used as a common electrode; andin the at least one display sub-pixel, the metal grid polarizing layeris electrically connected to the upper electrode of the photoelectricconversion device through a third via hole and a third lead line filledin the third via hole.

For example, the at least one display sub-pixel is a blue sub-pixel.

For example, the orthographic projection of the color filter layer onthe base substrate covers an orthographic projection of the active layerof the driving transistor part on the base substrate and an orthographicprojection of the active layer of the light sensing compensationtransistor part on the base substrate.

For example, the array substrate further comprises a black matrix layerbetween the color filter layer and the thin film transistor layer, andan orthographic projection of the black matrix layer on the basesubstrate covers an orthographic projection of the active layer of thedriving transistor part on the base substrate and an orthographicprojection of the active layer of the light sensing compensationtransistor part on the base substrate.

For example, the black matrix layer further covers a side surface of thephotoelectric conversion layer, and an extension line of the sidesurface intersects with the base substrate.

For example, the array substrate further comprises a second passivationlayer between the first passivation layer and the thin film transistorlayer, the second passivation layer covers the driving transistor partand the light sensing compensation transistor part; and thephotoelectric conversion device is between the first passivation layerand the second passivation layer, and the lower electrode of thephotoelectric conversion device is electrically connected to the sourceelectrode or the drain electrode of the light sensing compensationtransistor through a fourth via hole penetrating the second passivationlayer.

For example, the array substrate further comprises a plurality of gatelines and a plurality of data lines, in which the plurality of the gatelines and the plurality of the data lines intersect each other to definea plurality of display sub-pixels, the plurality of the displaysub-pixels comprise a first display sub-pixel, a second displaysub-pixel, and a third display sub-pixel; and the quantum dot layercomprises a first quantum dot pattern in the first display sub-pixel, asecond quantum dot pattern in the second display sub-pixel, and a thirdquantum dot pattern in the third display sub-pixel, the first quantumdot pattern, the second quantum dot pattern, and the third quantum dotpattern emit light under excitation of light from a backlight, so thatthe first display sub-pixel, the second display sub-pixel, and the thirddisplay sub-pixel respectively emit light of three different colors.

For example, the light from the backlight is ultraviolet light; thefirst display sub-pixel is a red sub-pixel, and the first quantum dotpattern generates red light under excitation of the ultraviolet light;the second display sub-pixel is a green sub-pixel, and the secondquantum dot pattern generates green light under excitation of theultraviolet light; and the third display sub-pixel is a blue sub-pixel,and the third quantum dot pattern generates blue light under excitationof the ultraviolet light.

For example, the array substrate further comprises a plurality of gatelines and a plurality of data lines, the plurality of the gate lines andthe plurality of the data lines intersect each other to define aplurality of display sub-pixels, the plurality of the display sub-pixelscomprise a first display sub-pixel, a second display sub-pixel, and athird display sub-pixel; the quantum dot layer comprises a first quantumdot pattern in the first display sub-pixel and a second quantum dotpattern in the second display sub-pixel; the array substrate furthercomprises a light diffusion pattern in the third display sub-pixel, andthe light diffusion pattern is in a same layer as both the first quantumdot pattern and the second quantum dot pattern; and the first quantumdot pattern and the second quantum dot pattern emit light underexcitation of light from a backlight, and light from the backlightpasses through the light diffusion pattern and is uniformized by thelight diffusion pattern, so that the first display sub-pixel, the seconddisplay sub-pixel, and the third display sub-pixel respectively emitlight of three different colors.

For example, the third display sub-pixel is a blue sub-pixel, and thelight from the backlight is blue light; the first display sub-pixel is ared sub-pixel, and the first quantum dot pattern generates red lightunder excitation of the blue light; and the second display sub-pixel isa green sub-pixel, and the second quantum dot pattern generates greenlight under excitation of the blue light.

For example, the light diffusion pattern comprises an organic matrix andinorganic particles dispersed in the organic matrix.

For example, the metal grid polarizing layer comprises an etchingbarrier layer on a side of the planarization layer away from the basesubstrate, a metal grid layer on a side of the etching barrier layeraway from the base substrate, and a protection layer on a side of themetal grid layer away from the base substrate.

For example, the metal grid layer comprises a plurality of metal stripsprovided in parallel with one another, and the protection layer coverstwo adjacent metal strips of the plurality of the metal strips andcovers a region between the two adjacent metal strips, but theprotection layer is not in contact with the etching barrier layerexposed in the region between the two adjacent metal strips.

For example, the planarization layer comprises a thermal curable layerand a photo curable layer, the thermal curable layer is closer to thebase substrate than the photo curable layer, and a surface of the photocurable layer away from the base substrate is flat.

According to at least one embodiment of the present disclosure, adisplay panel is provided, and the display panel comprises: any one ofthe array substrates mentioned above, a counter substrate providedopposite to the array substrate, and a liquid crystal layer between thearray substrate and the counter substrate.

According to at least one embodiment of the present disclosure, adisplay device is provided, and the display device comprises: any one ofthe display panels mentioned above.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to clearly illustrate the technical solution of the embodimentsof the present disclosure, the drawings of the embodiments will bebriefly described. It is apparent that the described drawings are onlyrelated to some embodiments of the present disclosure and thus are notlimitative of the present disclosure.

FIG. 1 is a schematic diagram of a structure of an array substrateprovided by an embodiment of the present disclosure;

FIG. 2 is another schematic diagram of a structure of an array substrateprovided by an embodiment of the present disclosure;

FIG. 3 is a schematic diagram of a structure of a display panel providedby an embodiment of the present disclosure; and

FIG. 4 is a circuit schematic diagram of an array substrate provided byan embodiment of the present disclosure.

DETAILED DESCRIPTION

In order to make objects, technical details and advantages of theembodiments of the disclosure apparent, the technical solutions of theembodiment will be described in a clearly and fully understandable wayin connection with the drawings related to the embodiments of thedisclosure. It is apparent that the described embodiments are just apart but not all of the embodiments of the disclosure. Based on thedescribed embodiments herein, those skilled in the art may obtain otherembodiment, without any creative work, which shall be within the scopeof the disclosure.

Referring to FIG. 1, at least one embodiment of the present disclosureprovides an array substrate, which includes a base substrate 1; a thinfilm transistor layer on the base substrate 1; a first passivation layer9 on a side of the thin film transistor layer away from the basesubstrate 1; a quantum dot layer 10 on a side of the first passivationlayer 9 away from the base substrate 1 and in a display region of thearray substrate; a color filter layer 11 on a side of the quantum dotlayer 10 away from the base substrate 1, in which an orthographicprojection of the quantum dot layer 10 on the base substrate 1 is withinan orthographic projection of the color filter layer 11 on the basesubstrate 1; a planarization layer 12 on a side of the first passivationlayer 9 away from the base substrate 1 and on a side of the color filterlayer 11 away from the base substrate 1; and a metal grid polarizinglayer 13 on a side of the planarization layer 12 away from the basesubstrate 1.

The above array substrate includes the base substrate and the thin filmtransistor layer, the first passivation layer 9, the quantum dot layer10, the color filter layer 11, the planarization layer 12, and the metalgrid polarizing layer 13 that are sequentially arranged on the basesubstrate. The quantum dot layer 10 is arranged in the display region,the color filter layer 11 is provided on the side of the quantum dotlayer 10 away from the base substrate 1, and the orthographic projectionof the color filter layer 11 on the base substrate 1 covers theorthographic projection of the quantum dot layer 10 on the basesubstrate 1, the planarization layer 12 is provided on the side of thecolor filter layer 11 and the first passivation layer 9 away from thebase substrate 1, and the metal grid polarizing layer 13 is provided onthe side of the planarization layer 12 away from the base substrate 1.The thin film transistor layer includes a plurality of electricalcomponents, the first passivation layer 9 covers the thin filmtransistor layer to provide protection for the thin film transistorlayer and achieve required electrical insulation between the electricalcomponents in the thin film transistor layer and other electricalcomponents. The quantum dot layer 10 is arranged in the display regionand generates excitation light under excitation of light from abacklight. The excitation light is modulated by the liquid crystal layer21 (see below) to realize the display function; by using the quantum dotlayer 10, the display effect of the display device can be significantlyimproved and the utilization rate of light from the backlight can alsobe improved.

However, on the one hand, the quantum dot layer 10 may not be able toconvert all the light from the backlight, so that part of the light fromthe backlight may pass through the quantum dot layer 10 and mix with theexcitation light, which results in the monochromaticity of theexcitation light being poor. On the other hand, light from externalenvironment may also be incident on the quantum dot layer 10 from theside of the metal grid polarizing layer 13 away from the base substrate1, which causes the quantum dot layer 10 to be undesirably excited toemit light by external ambient light. In order to solve the aboveproblems, according to the embodiments of the present disclosure, thecolor filter layer 11 is provided on the side of the quantum dot layer10 away from the base substrate 1, and the orthographic projection ofthe color filter layer 11 on the base substrate 1 covers theorthographic projection of the quantum dot layer 10 on the basesubstrate 1, so as to shield light from the external environment and thepart of light from the backlight and passing through the quantum dotlayer 10, thereby ensuring the monochromaticity of the excitation lightemitted by the quantum dot layer 10, and significantly improving thedisplay effect of the display panel including the array substrate.

The fluorescent properties of the quantum dot material included in thequantum dot layer 10 may completely destroy the polarization state oflight. Therefore, in order to achieve normal display, a built-inpolarizer must be provided for the quantum dot layer 10. According tothe embodiments of the present disclosure, the metal grid polarizinglayer 13 is provided on the side of the quantum dot layer 10 away fromthe base substrate 1, so that the excitation light from the quantum dotlayer 10 has polarization characteristics, thereby ensuring that theliquid crystal panel including the array substrate realizes normaldisplay. The structure obtained after the quantum dot layer 10 is formedon the base substrate 1 has a large surface level difference, so thatthe production of the metal grid polarizing layer 13 with a nano-levelfine structure cannot be performed normally. Therefore, in theembodiments of the present disclosure, after the quantum dot layer 10 isformed on the base substrate, the planarization layer 12 is provided onthe side of the first passivation layer 9 and the color filter layer 11away from the base substrate 1, and the metal grid polarizing layer 13is provided on the planarization layer 12, so that the metal gridpolarizing layer 13 of high quality can be obtained.

In the embodiments of the present disclosure, the array substrateincludes both the quantum dot layer 10 and the metal grid polarizinglayer 13, and the orthographic projection of the color filter layer 11on the base substrate 1 covers the orthographic projection of thequantum dot layer 10 on the base substrate 1, which can significantlyimprove the display effect of the display panel using the arraysubstrate.

It should be noted that, the quantum dot layer 10 in the display regionof the array substrate can be understood as: the quantum dot layer 10includes a plurality of quantum dot patterns (for example, a firstquantum dot pattern 10 a, a second quantum dot pattern 10 b, and a thirdquantum dot pattern 10 c described below), the plurality of the quantumdot patterns are respectively located in display regions of a pluralityof display sub-pixels (for example, a first display sub-pixel, a seconddisplay sub-pixel, and a third display sub-pixel described below). Forexample, the plurality of the quantum dot patterns respectively locatedin the display regions of the plurality of the display sub-pixels arespaced apart from each other.

It should be noted that, the color filter layer 11 being on the side ofthe quantum dot layer 10 away from the base substrate 1 and theorthographic projection of the quantum dot layer 10 on the basesubstrate 1 being within the orthographic projection of the color filterlayer 11 on the base substrate 1 can be understood as: in the displaysub-pixels, the color filter layer 11 is provided on the side of thequantum dot pattern away from the base substrate 1 and the orthographicprojection of the quantum dot pattern on the base substrate 1 is locatedwithin the orthographic projection of the color filter layer 11 on thebase substrate 1. For example, the color filter layer 11 includes aplurality of parts respectively located in a plurality of the displaysub-pixels, the plurality of the parts are spaced apart from each other,and the plurality of the parts respectively cover the plurality of thequantum dot patterns.

It should be noted that, in the display sub-pixel, the excitation lightgenerated by the excitation of the quantum dot layer 10 (that is, thequantum dot patterns in the display sub-pixel) is monochromatic light,and the color of the excitation light is the same as the color of thelight that can transmit through the color filter layer 11, so that thecolor filter layer 11 only allows the excitation light to pass and doesnot allow the light of a color different from the color of theexcitation light to pass.

For example, the planarization layer 12 includes a thermal curable layerand a photo curable layer, the thermal curable layer is closer to thebase substrate 1 than the photo curable layer, and a surface of thephoto curable layer away from the base substrate 1 is flat. The thermalcuring process is slow, which allows the material to be cured to flowsufficiently to eliminate as much surface levels as possible; the photocuring process is faster, and the material to be cured can be shaped assoon as possible when the material to be cured reaches a flat state toobtain a flat surface. The planarization layer 12 adopts a double-layerstructure of the thermal curable layer and the photo curable layer,which can make the surface of the planarization layer 12 away from thebase substrate 1 have excellent planarization characteristics, andensure the yield rate of forming the metal grid polarizing layer 13, soas to better obtain the metal grid polarizing layer 13.

For example, as shown in FIG. 1 and FIG. 2, the thin film transistorlayer includes a driving transistor part and a light sensingcompensation transistor part. Each of the driving transistor part andthe light sensing compensation transistor part includes a gate electrode2 and a gate insulation layer 3, an active layer 4, a source electrodeand a drain electrode formed on the base substrate 1. Because the sourceelectrode and the drain electrode are symmetrical structures and areinterchangeable, both the source electrode and the drain electrode areindicated by the reference numeral 5 in the figures.

For example, as shown in FIG. 1 and FIG. 2, the array substrate furtherincludes a photoelectric conversion device disposed on the basesubstrate 1. The photoelectric conversion device is configured toreceive a part of excitation light generated by the quantum dot layer 10and reflected by the metal grid polarizing layer 13 and convert the partof excitation light into an electrical signal. The photoelectricconversion device includes an upper electrode 8, a lower electrode 8′and a photoelectric conversion layer 7 between the upper electrode 8 andthe lower electrode 8′, and the lower electrode 8′ is electricallyconnected to the source electrode or the drain electrode of the lightsensing compensation transistor part.

The excitation light generated by the excitation of the quantum dotlayer 10 is incident on the metal grid polarizing layer 13 after beingtransmitted through the color filter layer 11, a part of the light istransmitted through the metal grid polarizing layer 13 to becomepolarized light, and a part of the light is reflected by the metal gridpolarizing layer 13 to become reflected light. In the case where theamount of polarized light increases, the amount of reflected lightdecreases; and in the case where the amount of polarized lightdecreases, the amount of reflected light increases. The reflected lightis incident on the photoelectric conversion device and is converted intoan electric signal by the photoelectric conversion device, and theelectric signal is output to a detection circuit through the lightsensing compensation transistor part and a signal reading line to bedescribed below. The detection circuit judges the magnitude of theelectrical signal, and can judge the magnitude of the reflected light,and thus can judge the amount of the polarized light. As a result, theregion where the amount of polarized light is abnormal can be found inreal time, and the abnormal region can be compensated by an electricalcompensation method to ensure the uniformity of the display image.

In the following, the electrical connection relationship of the drivingtransistor part, the light sensing compensation transistor part and thelight conversion device will be further described. FIG. 4 is a circuitschematic diagram of an array substrate provided by an embodiment of thepresent disclosure. Referring to FIG. 4, the array substrate includes aplurality of gate lines 111 and a plurality of data lines 121 disposedon the base substrate 1. The plurality of the gate lines 111 and theplurality of the data lines 121 intersect each other to define aplurality of display sub-pixels 100; each of the display sub-pixels 100includes a driving transistor part (referring to the region A in FIG.4), the gate electrode of the driving transistor part is electricallyconnected to a corresponding gate line 111, and the source electrode orthe drain electrode of the driving transistor is electrically connectedto a corresponding data line 121. In each of the display sub-pixels, apixel electrode 20 is provided on a side of the metal grid polarizinglayer 13 away from the base substrate, the pixel electrode 20 iselectrically connected to the drain electrode or the source electrode ofthe driving transistor part through a second via hole 17 and a secondlead line 192 filled in the second via hole 17.

Continuing to refer to FIG. 4, the light sensing compensation transistorpart (referring to the region B in FIG. 4) and the photoelectricconversion device (referring to the region C in FIG. 4) are located inat least one display sub-pixel of the plurality of the displaysub-pixels 100; the array substrate further includes a sensing controlline 112 arranged in parallel with the plurality of the gate lines 111and a signal reading line 122 arranged in parallel with the plurality ofthe data lines 121; the gate electrode of the light sensing compensationtransistor part is electrically connected to the sensing control line112, and the drain electrode or the source electrode of the sensingcompensation transistor part is electrically connected to the signalreading line 122. A control signal is applied to the sensing controlline 112 to control the turn-on and turn-off of the light sensingcompensation transistor part. For example, in the case where the lightsensing compensation transistor part is turned on, and the electricalsignal generated by the photoelectric conversion device is output to thesignal reading line 122 through the light sensing compensationtransistor part, and then is output to an external detection circuitthrough the signal reading line 122, and the external detection circuitjudges the magnitude of the electrical signal. According to the signalfed back from the detection circuit, it is determined whether there is aregion with uneven display brightness, thereby determining whether toperform electrical compensation.

For example, referring to FIG. 1, FIG. 2 and FIG. 4, the array substratefurther includes a common electrode line 15 arranged in parallel withthe plurality of the gate lines 111. In each of the display sub-pixels100, the metal grid polarizing layer 13 is electrically connected to thecommon electrode line 15 through a first via hole 16 and a first leadline 191 filled in the first via hole 16, so that the metal gridpolarizing layer 13 is further used as a common electrode. For example,the metal grid polarizing layer 13 includes a plurality of metal strips,and a width of each of the metal strips is in a nanometer level, and awidth of a region between adjacent metal strips is also in the nanometerlevel. In this case, the metal grid polarizing layer 13 can be regardedas a plate electrode as a whole. For example, referring to FIG. 4, oneelectrode plate of a liquid crystal capacitor Clc is a pixel electrode20, and the other electrode plate is the common electrode, such as themetal grid polarizing layer 13 used as the common electrode. An electricfield is formed between the pixel electrode 20 and the common electrodeto control a deflection state of liquid crystal molecules in the liquidcrystal layer 21 (referring to FIG. 3), thereby controlling thetransmittance of the polarized light, which is transmitted through themetal grid polarizing layer 13, through the liquid crystal layer 21 torealize image display.

Further, for example, in the at least one display sub-pixel having thelight sensing compensation transistor part and the photoelectricconversion device, the metal grid polarizing layer 13 is electricallyconnected to an upper electrode 8 of the photoelectric conversion devicethrough a third via hole 18 and a third lead line 193 filled in thethird via hole 18, thereby providing a bias voltage for thephotoelectric conversion device.

For example, for manufacturing convenience, the gate lines 111, thesensing control line 112, the common electrode lines 15, the gateelectrode of the driving transistor part, and the gate electrode of thephotosensitive compensation transistor part are arranged in the samelayer and made of the same material.

For example, for manufacturing convenience, the source electrode and thedrain electrode of the driving transistor part, the source electrode andthe drain electrode of the light compensation transistor part, the datalines 121 and the signal reading line 122 are arranged in the same layerand made of the same material.

For example, in order to increase an aperture ratio, the light sensingcompensation transistor part and the photoelectric conversion device donot have to be provided in each of the display sub-pixels 100, but areselectively provided in one or a part of the display sub-pixels 100. Thesetting position and the setting number of the photoelectric conversiondevice can be flexibly selected according to actual requirements.

Because human eyes are less sensitive to blue light, the at least onedisplay sub-pixel provided with the light sensing compensationtransistor part and the photoelectric conversion device is, for example,a blue sub-pixel, so as to reduce the effect of the light sensingcompensation transistor part and the photoelectric conversion device ondisplay brightness as much as possible.

For example, as shown in FIG. 1 and FIG. 2, the metal grid polarizinglayer 13 includes an etching barrier layer 131 disposed on a side of theplanarization layer 12 away from the base substrate 1, a metal gridlayer 132 disposed on a side of the etching barrier layer 131 away fromthe base substrate 1, and a protection layer 133 disposed on a side ofthe metal grid layer 132 away from the base substrate 1. For example,the formation process of the metal grid layer 132 is as follows: forminga metal film on the etching barrier layer 131; forming a photoresistlayer on the metal film; imprinting the photoresist layer by ananoimprint template to form a photoresist pattern; and etching themetal film with the photoresist pattern as a mask pattern to form themetal grid layer 132. The arrangement of the etching barrier layer 131can prevent over-etching during the above etching process and protectthe underlying planarization layer 12.

For example, the protection layer 133 is provided on the metal gridlayer 132 to protect the metal grid layer 132 and prevent the metal gridlayer 132 from being damaged during subsequent manufacturing processes.Referring to FIG. 1 and FIG. 2, the protection layer 133 is locatedbetween the metal grid layer 132 and the pixel electrode 20, so that theprotection layer 133 also has the function of realizing electricalinsulation between the metal grid layer 132 and the pixel electrode 20.

For example, as shown in FIG. 1 and FIG. 2, the metal grid layer 132includes a plurality of metal stripes arranged in parallel with oneanother. Further, for example, as shown in FIG. 2, the protection layer133 covers two adjacent metal strips of the plurality of the metalstrips and covers a region between the two adjacent metal strips, butthe protection layer 133 is not in contact with the exposed etchingbarrier layer 131 in the region between the two adjacent metal stripes.In this case, the region between two adjacent metal stripes is notfilled with any medium, which improves the polarization characteristicsof the metal grid layer 132, so that more light can pass through themetal grid layer 132 to become polarized light. For example, thematerial of the protection layer 133 is oxide, nitride, or oxynitride,such as silicon oxide. For example, a suitable forming process, such asa chemical vapor deposition method, is selected so that the protectionlayer 133 has the structure shown in FIG. 2.

For example, as shown in FIG. 1 and FIG. 2, the orthographic projectionof the color filter layer 11 on the base substrate 1 covers theorthographic projection of a channel portion in the thin film transistorlayer on the base substrate 1. Specifically, for example, theorthographic projection of the color filter layer 11 on the basesubstrate 1 covers the orthographic projection of the active layer (forexample, the channel region in the active layer) of the drivingtransistor portion on the base substrate 1 and covers the orthographicprojection of the active layer (for example, the channel region in theactive layer) of the light sensing compensation transistor on the basesubstrate 1 to avoid strong light in the subsequent process, such as thestrong light in the process of forming the planarization layer 12, fromaffecting the characteristics of the driving transistor part and thelight sensing compensation transistor part, and prevent the drivingtransistor part and the light sensing compensation transistor part fromgenerating undesired leakage current.

For example, as shown in FIG. 2, the array substrate further includes ablack matrix layer 14 disposed between the color filter layer 11 and thethin film transistor layer. For example, an orthographic projection ofthe black matrix layer 14 on the base substrate 1 covers theorthographic projection of the active layer (for example, the channelregion in the active layer) of the driving transistor part on the basesubstrate 1 and the orthographic projection of the active layer (forexample, the channel region in the active layer) of the light sensingcompensation transistor part on the base substrate 1, so as to avoidstrong light in the subsequent process, such as the strong light in theprocess of forming the planarization layer 12, from affecting thecharacteristics of the driving transistor part and the light sensingcompensation transistor part, and prevent the driving transistor partand the light sensing compensation transistor part from generatingundesired leakage current.

It should be noted that, according to actual requirements, both thecolor filter layer 11 and the black matrix layer 14 or any one of thecolor filter layer 11 and the black matrix layer 14 can be selected tocover the active layer of the driving transistor part (for example, thechannel region in the active layer) and the active layer of the lightsensing compensation transistor part (for example, the channel region inthe active layer).

It should be noted that, because wiring lines are provided betweenadjacent display sub-pixels 100, such as the gate lines 111, the datalines 121, the sensing control line 11, the signal reading line 122, andthe common electrode lines 15 as described above, the black matrix layer14 also covers these wiring lines; the region where the drivingtransistor part is located, the region where the photosensitivecompensation transistor part is located, and other regions covered bythe black matrix are the non-display regions of the display sub-pixels,and the regions except for the non-display regions of the displaysub-pixels are display regions, and quantum dot patterns included in thequantum dot layer 10 as described above are located in the displayregions of the display sub-pixels.

By adopting the structure provided by the embodiments of the presentdisclosure, the quantum dot layer 10, the light sensing compensationtransistor part and the photoelectric conversion device are disposed onthe array substrate, the quantum dot layer 10 emits light stably and isnot affected by the gray scale, which facilitates the collection ofstable signals by the photoelectric conversion device, thereby realizingaccurate real-time monitoring and compensation for regions with unevendisplay brightness.

For example, the black matrix layer 14 also covers a side surface of thephotoelectric conversion layer 7, and an extension line of the sidesurface intersects the base substrate 1. As mentioned above, through thelight sensing compensation transistor part and the photoelectricconversion device, the region where the amount of polarized light is notuniform can be found in real time and the gray scale compensation can beperformed according to the feedback signal. By shielding the sidesurface of the photoelectric conversion layer 7 by the black matrixlayer 14, light from other regions can be shielded from incident to thephotoelectric conversion layer 7, ensuring that the photoelectricconversion layer 7 only receives the reflected light in the region wherethe photoelectric conversion layer 7 is located and in its adjacentregions, thereby realizing uniformity compensation for the metal gridpolarizing layer 13 and the compensation of the efficiency attenuationof the quantum dot layer 10, and avoiding the problem of screen burning.

For example, as shown in FIG. 1 and FIG. 2, the metal grid polarizinglayer 13 is electrically connected to a common electrode line 15 by thefirst via hole 16 passing through all of the metal grid polarizing layer13, the planarization layer 12, the first passivation layer 9 and thegate insulating layer 3, and the first lead line 191 filled in the firstvia hole 16.

The metal grid polarizing layer 13 is electrically connected to thecommon electrode line 15 through the first via hole 16 and the firstlead line 191 in the first via hole 16 provided in the non-displayregion, this electrical connection method hardly affects the pixelaperture ratio. The metal grid layer 132 is exposed at the opening ofthe first via hole 16 to ensure that the first lead line 191 iselectrically connected with the metal grid layer 132.

For example, as shown in FIG. 1 and FIG. 2, the pixel electrode 20 iselectrically connected to the drain electrode or the source electrode ofthe driving transistor part by the second via hole 17 passing throughall of the metal grid polarizing layer 13, the planarization layer 12,and the first passivation layer 9, and the second lead line 192 filledin the second via hole 17. The metal grid layer 132 is not exposed atthe opening of the second via hole 17 to prevent the metal grid layer132 from being short-circuited with the pixel electrode 20 when themetal grid layer 132 is used as a common electrode.

For example, the first lead line 191 and the second lead line 192 areprovided in the same layer and made of the same material to simplify themanufacturing process.

For example, the material of the pixel electrode 20 is a transparentconductive metal oxide, such as ITO, IGZO, and so on. In the case wherea transparent conductive metal oxide is used to make the pixel electrode20, high temperature annealing above 200° C. is not performed, and onlyannealing at 100 to 200° C. is performed, which can prevent the quantumdot layer 10 from being affected by the high temperature processes. Thepixel electrode 20 is electrically connected to the source electrode ordrain electrode 5 through a via hole and a lead line, and the connectionmethod is simple.

For example, as shown in FIG. 1 and FIG. 2, the metal grid polarizinglayer 13 is electrically connected to the upper electrode 8 by a thirdvia hole 18 passing through both the metal grid polarizing layer 13 andthe planarization layer 12, and the third lead line 193 filled in thethird via hole 18. The metal grid polarizing layer 13 is connected tothe upper electrode 8 through the via hole to reduce the effect on theaperture ratio as much as possible. For example, as shown in FIG. 1 andFIG. 2, the metal grid layer 132 is exposed at the opening of the thirdvia hole 18 to ensure that the third lead line 193 is electricallyconnected with the upper electrode 8. For example, the protection layer133 also covers the third lead line 193, but the protection layer 133covers neither the first lead line 191 nor the second lead line 192.

For example, the material of the first lead line 191, the second leadline 192, and the third lead line 193 is metal or transparent conductivemetal oxide.

For example, as shown in FIG. 1 and FIG. 2, the array substrate furtherincludes a second passivation layer 6 between the first passivationlayer 9 and the thin film transistor layer; the second passivation layer6 covers the driving transistor part and the light sensing compensationtransistor part; the photoelectric conversion device is located betweenthe first passivation layer 9 and the second passivation layer 6, andthe lower electrode 8′ of the photoelectric conversion device iselectrically connected to the source electrode or the drain electrode ofthe light sensing compensation transistor part by a fourth via hole 60penetrating the second passivation layer 6.

Continuing to refer to FIG. 4, the array substrate provided by at leastone embodiment of the present disclosure includes a plurality of gatelines 111 and a plurality of data lines 121, and the plurality of thegate lines 111 and the plurality of the data lines 121 intersect eachother to define a plurality of display sub-pixels 100. For example, theplurality of the display sub-pixels 100 include a first displaysub-pixel 101, a second display sub-pixel 102, and a third displaysub-pixel 103; the quantum dot layer 10 includes a first quantum dotpattern l0 a located in the first display sub-pixel 101, a secondquantum dot pattern 10 b located in the second display sub-pixel 102 anda third quantum dot pattern 10 c located in the third display sub-pixel103. The first quantum dot pattern 10 a, the second quantum dot pattern10 b, and the third quantum dot pattern 10 c emit light under excitationof light from a backlight, so that the first display sub-pixel, thesecond display sub-pixel, and the third display sub-pixel respectivelyemit light of three different colors. For example, the light of thethree different colors can be mixed into white light. For example, thefirst quantum dot pattern 10 a, the second quantum dot pattern 10 b, andthe third quantum dot pattern 10 c are respectively formed of differentmaterials.

For example, the light from the backlight is ultraviolet light; thefirst display sub-pixel 101 is a red sub-pixel, and the first quantumdot pattern 10 a generates red light under the excitation of ultravioletlight; the second display sub-pixel 102 is a green sub-pixel, the secondquantum dot pattern 10 b generates green light under the excitation ofultraviolet light; and the third display sub-pixel 103 is a bluesub-pixel, and the third quantum dot pattern 10 c generates blue lightunder the excitation of the ultraviolet light. For example, in adirection perpendicular to the base substrate, a height of the firstquantum dot pattern 10 a, a height of the second quantum dot pattern 10b, and a height of the third quantum dot pattern 10 c are equal to eachother, so as to reduce the difficulty of manufacturing the planarizationlayer 12.

For example, the quantum dot layer 10 includes a first quantum dotpattern 10 a located in the first display sub-pixel 101 and a secondquantum dot pattern 10 b located in the second display sub-pixel 102;the array substrate further includes a light diffusion pattern 10dlocated in a third display sub-pixel 103, the light diffusion pattern10d is arranged in the same layer as both the first quantum dot pattern10 a and the second quantum dot pattern 10b; both the first quantum dotpattern 10 a and the second quantum dot pattern 10 b emit light underthe excitation of light from the backlight, and light from the backlightpasses through the light diffusion pattern 10 d and is uniformized bythe light diffusion pattern 10 d, so that the first display sub-pixel101, the second display sub-pixel 102 and the third display sub-pixel103 respectively emit light of three different colors. For example, thelight of the three different colors can be mixed into white light. Forexample, the first quantum dot pattern 10 a and the second quantum dotpattern 10 b are respectively formed of different materials. Forexample, the light diffusion pattern 10d includes an organic matrix andinorganic particles dispersed in the organic matrix; the material of theorganic matrix is, for example, a chemically stable resin material, andthe material of the inorganic particles is, for example, titaniumdioxide, silicon dioxide, zirconium dioxide, and aluminum oxide, and soon.

For example, the third display sub-pixel 103 is a blue sub-pixel, andthe light from the backlight is blue light; the first display sub-pixel101 is a red sub-pixel, and the first quantum dot pattern 10 a generatesred light under the excitation of blue light; and the second displaysub-pixel 102 is a green sub-pixel, and the second quantum dot pattern10 b generates green light under the excitation of blue light. Forexample, in a direction perpendicular to the base substrate, a height ofthe light diffusion pattern 10d, the height of the first quantum dotpattern 10 a, and the height of the second quantum dot pattern 10 b areequal to each other, so as to reduce the manufacturing difficulty of theplanarization layer 12.

At least one embodiment of the present disclosure further provides adisplay panel, as shown in FIG. 3, the display panel includes any one ofthe array substrates provided in the above technical solutions, acounter substrate 22 disposed opposite to the array substrate, and aliquid crystal layer 21 a disposed between the array substrate and thecounter substrate 22. For example, the backlight is located on the sideof the array substrate 1 away from the counter substrate 22. Forexample, the backlight is a direct type backlight or an edge typebacklight. For example, the backlight uses a light source emitting bluelight or ultraviolet light, such as OLED lamp beads or OLED lamp strips.

At least one embodiment of the present disclosure further provides adisplay device, which includes any one of the display panels provided inthe above technical solutions. For example, the display device is anyproduct or component with a display function, such as a mobile phone, atablet computer, a television, a monitor, a notebook computer, a digitalphoto frame, a navigator and so on, which are not limited in theembodiments of the present disclosure.

What are described above is related to only the illustrative embodimentsof the present disclosure and not limitative to the protection scope ofthe present application. Therefore, the protection scope of the presentapplication shall be defined by the accompanying claims.

1. An array substrate, comprising: a base substrate; a thin filmtransistor layer on the base substrate; a first passivation layer on aside of the thin film transistor layer away from the base substrate; aquantum dot layer on a side of the first passivation layer away from thebase substrate and in a display region of the array substrate; a colorfilter layer on a side of the quantum dot layer away from the basesubstrate, wherein an orthographic projection of the quantum dot layeron the base substrate is within an orthographic projection of the colorfilter layer on the base substrate; a planarization layer on a side ofthe first passivation layer away from the base substrate and on a sideof the color filter layer away from the base substrate; and a metal gridpolarizing layer on a side of the planarization layer away from the basesubstrate.
 2. The array substrate according to claim 1, wherein the thinfilm transistor layer comprises a driving transistor part and a lightsensing compensation transistor part, each of the driving transistorpart and the light sensing compensation transistor part comprises a gateelectrode, a gate insulating layer, an active layer, a source electrodeand a drain electrode; the array substrate further comprises aphotoelectric conversion device, the photoelectric conversion device isconfigured to receive a part of excitation light generated by thequantum dot layer and is reflected by the metal grid polarizing layerand convert the part of the excitation light into an electrical signal;and the photoelectric conversion device comprises an upper electrode, alower electrode, and a photoelectric conversion layer between the upperelectrode and the lower electrode, and the lower electrode iselectrically connected to the source electrode or the drain electrode ofthe light sensing compensation transistor part.
 3. The array substrateaccording to claim 2, further comprising a plurality of gate lines and aplurality of data lines, wherein the plurality of the gate lines and theplurality of the data lines intersect each other to define a pluralityof display sub-pixels, each of the display sub-pixels comprises thedriving transistor part, the gate electrode of the driving transistorpart is electrically connected to a corresponding gate line, and thesource electrode or the drain electrode of the driving transistor iselectrically connected to a corresponding data line; and in each of thedisplay sub-pixels, a pixel electrode is provided on a side of the metalgrid polarizing layer away from the base substrate, and the pixelelectrode is electrically connected to the drain electrode or the sourceelectrode of the driving transistor part through a second via hole and asecond lead line filled in the second via hole.
 4. The array substrateaccording to claim 3, wherein the light sensing compensation transistorpart and the photoelectric conversion device are in at least one displaysub-pixel of the plurality of the display sub-pixels; the arraysubstrate further comprises a sensing control line provided in parallelwith the plurality of the gate lines and a signal reading line providedin parallel with the plurality of the data lines; and the gate electrodeof the light sensing compensation transistor part is electricallyconnected to the sensing control line, and the drain electrode or thesource electrode of the light sensing compensation transistor part iselectrically connected to the signal reading line.
 5. The arraysubstrate according to claim 4, further comprising a common electrodeline provided in parallel with the plurality of the gate lines, wherein:in each of the display sub-pixels, the metal grid polarizing layer iselectrically connected to the common electrode line through a first viahole and a first lead line filled in the first via hole, so that themetal grid polarizing layer is further used as a common electrode; andin the at least one display sub-pixel, the metal grid polarizing layeris electrically connected to the upper electrode of the photoelectricconversion device through a third via hole and a third lead line filledin the third via hole.
 6. The array substrate according to claim 5,wherein the at least one display sub-pixel is a blue sub-pixel.
 7. Thearray substrate according to claim 2, wherein the orthographicprojection of the color filter layer on the base substrate covers anorthographic projection of the active layer of the driving transistorpart on the base substrate and an orthographic projection of the activelayer of the light sensing compensation transistor part on the basesubstrate.
 8. The array substrate according to claim 2, furthercomprising a black matrix layer between the color filter layer and thethin film transistor layer, wherein: an orthographic projection of theblack matrix layer on the base substrate covers an orthographicprojection of the active layer of the driving transistor part on thebase substrate and an orthographic projection of the active layer of thelight sensing compensation transistor part on the base substrate.
 9. Thearray substrate according to claim 8, wherein the black matrix layerfurther covers a side surface of the photoelectric conversion layer, andan extension line of the side surface intersects with the basesubstrate.
 10. The array substrate according to further comprising asecond passivation layer between the first passivation layer and thethin film transistor layer, wherein: the second passivation layer coversthe driving transistor part and the light sensing compensationtransistor part; and the photoelectric conversion device is between thefirst passivation layer and the second passivation layer, and the lowerelectrode of the photoelectric conversion device is electricallyconnected to the source electrode or the drain electrode of the lightsensing compensation transistor through a fourth via hole penetratingthe second passivation layer.
 11. The array substrate according to claim1, further comprising a plurality of gate lines and a plurality of datalines, wherein the plurality of the gate lines and the plurality of thedata lines intersect each other to define a plurality of displaysub-pixels, the plurality of the display sub-pixels comprise a firstdisplay sub-pixel, a second display sub-pixel, and a third displaysub-pixel; and the quantum dot layer comprises a first quantum dotpattern in the first display sub-pixel, a second quantum dot pattern inthe second display sub-pixel, and a third quantum dot pattern in thethird display sub-pixel, the first quantum dot pattern, the secondquantum dot pattern, and the third quantum dot pattern emit light underexcitation of light from a backlight, so that the first displaysub-pixel, the second display sub-pixel, and the third display sub-pixelrespectively emit light of three different colors.
 12. The arraysubstrate according to claim 11, wherein the light from the backlight isultraviolet light; the first display sub-pixel is a red sub-pixel, andthe first quantum dot pattern generates red light under excitation ofthe ultraviolet light; the second display sub-pixel is a greensub-pixel, and the second quantum dot pattern generates green lightunder excitation of the ultraviolet light; and the third displaysub-pixel is a blue sub-pixel, and the third quantum dot patterngenerates blue light under excitation of the ultraviolet light.
 13. Thearray substrate according to claim 1, further comprising a plurality ofgate lines and a plurality of data lines, wherein the plurality of thegate lines and the plurality of the data lines intersect each other todefine a plurality of display sub-pixels, the plurality of the displaysub-pixels comprise a first display sub-pixel, a second displaysub-pixel, and a third display sub-pixel; the quantum dot layercomprises a first quantum dot pattern in the first display sub-pixel anda second quantum dot pattern in the second display sub-pixel; the arraysubstrate further comprises a light diffusion pattern in the thirddisplay sub-pixel, and the light diffusion pattern is in a same layer asboth the first quantum dot pattern and the second quantum dot pattern;and the first quantum dot pattern and the second quantum dot patternemit light under excitation of light from a backlight, and light fromthe backlight passes through the light diffusion pattern and isuniformized by the light diffusion pattern, so that the first displaysub-pixel, the second display sub-pixel, and the third display sub-pixelrespectively emit light of three different colors.
 14. The arraysubstrate according to claim 13, wherein the third display sub-pixel isa blue sub-pixel, and the light from the backlight is blue light; thefirst display sub-pixel is a red sub-pixel, and the first quantum dotpattern generates red light under excitation of the blue light; and thesecond display sub-pixel is a green sub-pixel, and the second quantumdot pattern generates green light under excitation of the blue light.15. The array substrate according to claim 13, wherein the lightdiffusion pattern comprises an organic matrix and inorganic particlesdispersed in the organic matrix.
 16. The array substrate according toclaim 1, wherein the metal grid polarizing layer comprises an etchingbarrier layer on a side of the planarization layer away from the basesubstrate, a metal grid layer on a side of the etching barrier layeraway from the base substrate, and a protection layer on a side of themetal grid layer away from the base substrate.
 17. The array substrateaccording to claim 16, wherein the metal grid layer comprises aplurality of metal strips provided in parallel with one another, and theprotection layer covers two adjacent metal strips of the plurality ofthe metal strips and covers a region between the two adjacent metalstrips, but the protection layer is not in contact with the etchingbarrier layer exposed in the region between the two adjacent metalstrips.
 18. The array substrate according to claim 1, wherein theplanarization layer comprises a thermal curable layer and a photocurable layer, the thermal curable layer is closer to the base substratethan the photo curable layer, and a surface of the photo curable layeraway from the base substrate is flat.
 19. A display panel, comprisingthe array substrate according to claim 1, a counter substrate providedopposite to the array substrate, and a liquid crystal layer between thearray substrate and the counter substrate.
 20. A display device,comprising the display panel according to claim 19.